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Mikroèlektronika
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

Home > Search > Browse Section Index > ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ

ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ

Issue Title File
Vol 52, No 5 (2023) The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma PDF
(Rus)
Efremov A.M., Smirnov S.A., Betelin V.B.
Vol 52, No 4 (2023) Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures PDF
(Rus)
Efremov A.M., Bobylev A.V., Kwon K.
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