Informaçao sobre o Autor

Масальский, Н. В.

Edição	Seção	Título	Arquivo
Volume 53, Nº 3 (2024)	MODELING	Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Volume 52, Nº 5 (2023)	INSTRUMENTATION	Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region
Volume 52, Nº 4 (2023)	MODELING	Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric
Volume 53, Nº 5 (2024)	INSTRUMENTATION	Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor
Volume 54, Nº 2 (2025)	NANOTRANSISTORS	Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors
Volume 54, Nº 3 (2025)	INSTRUMENTATION	Temperature characteristics of a simple current mirror on silicon high-voltage nLDMOS with a large DRIFT area