Автор туралы ақпарат

Ефремов, А. М.

Шығарылым	Бөлім	Атауы	Файл
Том 53, № 1 (2024)	TECHNOLOGIES	Parameters and Composition of Plasma in a Mixture of CF₄ + H₂ + Ar: Effect of the CF₄/H₂ Ratio
Том 52, № 5 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
Том 52, № 4 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Том 52, № 2 (2023)	TECHNOLOGIES	Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
Том 52, № 1 (2023)	DIAGNOSTICS	Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Том 52, № 1 (2023)	TECHNOLOGIES	Параметры газовой фазы и кинетика реактивно-ионного травления SiO₂ в плазме CF₄/C₄F₈/Ar/He
Том 53, № 6 (2024)	DIAGNOSTICS	Gas Phase Composition and Fluorine Atom Kinetics in SF₆ Plasma
Том 53, № 6 (2024)	TECHNOLOGIES	Plasma Parameters and Si/SiO₂ Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium